Part Details for 3SK320 by Toshiba America Electronic Components
Overview of 3SK320 by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for 3SK320
3SK320 CAD Models
3SK320 Part Data Attributes:
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3SK320
Toshiba America Electronic Components
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Datasheet
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3SK320
Toshiba America Electronic Components
TRANSISTOR UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, 2-2K1B, 4 PIN, FET RF Small Signal
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | 2-2K1B, 4 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| Additional Feature | LOW NOISE | |
| Configuration | SINGLE | |
| FET Technology | METAL SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 0.03 pF | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| JESD-30 Code | R-PDSO-G4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | DUAL GATE, DEPLETION MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 240 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Gain-Min (Gp) | 12 dB | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | GALLIUM ARSENIDE |
Alternate Parts for 3SK320
This table gives cross-reference parts and alternative options found for 3SK320. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 3SK320, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 3SK299-U72-A | UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, PLASTIC, SO-4 | Renesas Electronics Corporation | 3SK320 vs 3SK299-U72-A |
| NE25139T1U74 | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | California Eastern Laboratories (CEL) | 3SK320 vs NE25139T1U74 |
| NE25139U73 | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, SOT-143, 4 PIN | NEC Electronics America Inc | 3SK320 vs NE25139U73 |
| 3SK299-U71-A | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC, SO-4 | NEC Electronics Group | 3SK320 vs 3SK299-U71-A |
| NE25139T1U74 | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, SOT-143, 4 PIN | NEC Electronics America Inc | 3SK320 vs NE25139T1U74 |
| NE25139T2U74 | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | California Eastern Laboratories (CEL) | 3SK320 vs NE25139T2U74 |
| NE25339-T1 | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | California Eastern Laboratories (CEL) | 3SK320 vs NE25339-T1 |
| NE25139T2U73 | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | California Eastern Laboratories (CEL) | 3SK320 vs NE25139T2U73 |
| 3SK299 | UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, PLASTIC, SO-4 | Renesas Electronics Corporation | 3SK320 vs 3SK299 |
| 3SK299-U72-A | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC, SO-4 | NEC Electronics Group | 3SK320 vs 3SK299-U72-A |