3SK274 vs NE25139-T1 feature comparison

3SK274 Toshiba America Electronic Components

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NE25139-T1 California Eastern Laboratories (CEL)

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Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TOSHIBA CORP CALIFORNIA EASTERN LABORATORIES
Package Description USQ, 2-2K1B, 4 PIN SMALL OUTLINE, R-PDSO-G4
Pin Count 4
Reach Compliance Code unknown unknown
Configuration SINGLE SINGLE
FET Technology METAL SEMICONDUCTOR METAL SEMICONDUCTOR
Feedback Cap-Max (Crss) 0.03 pF 0.03 pF
Highest Frequency Band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G4 R-PDSO-G4
Number of Elements 1 1
Number of Terminals 4 4
Operating Mode DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE
Operating Temperature-Max 125 °C 125 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 240
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Gain-Min (Gp) 17 dB 16 dB
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material GALLIUM ARSENIDE GALLIUM ARSENIDE
Base Number Matches 3 6
Additional Feature LOW NOISE
Case Connection SOURCE
DS Breakdown Voltage-Min 13 V
Drain Current-Max (ID) 0.04 A

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Compare NE25139-T1 with alternatives