Datasheets
NE25139-T1 by:

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, SOT-143, 4 PIN

Part Details for NE25139-T1 by NEC Electronics America Inc

Overview of NE25139-T1 by NEC Electronics America Inc

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Part Details for NE25139-T1

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NE25139-T1 Part Data Attributes:

NE25139-T1 NEC Electronics America Inc
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NE25139-T1 NEC Electronics America Inc RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, SOT-143, 4 PIN
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer NEC ELECTRONICS AMERICA INC
Package Description SOT-143, 4 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature LOW NOISE
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 13 V
FET Technology METAL SEMICONDUCTOR
Feedback Cap-Max (Crss) 0.03 pF
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G4
JESD-609 Code e0
Number of Elements 1
Number of Terminals 4
Operating Mode DEPLETION MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Gain-Min (Gp) 16 dB
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material GALLIUM ARSENIDE

Alternate Parts for NE25139-T1

This table gives cross-reference parts and alternative options found for NE25139-T1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NE25139-T1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NE25139 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, SOT-143, 4 PIN NEC Electronics America Inc NE25139-T1 vs NE25139
NE25139T1 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET California Eastern Laboratories (CEL) NE25139-T1 vs NE25139T1
NE25139-T1 UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET California Eastern Laboratories (CEL) NE25139-T1 vs NE25139-T1
Part Number Description Manufacturer Compare
NE25139T1U72 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET California Eastern Laboratories (CEL) NE25139-T1 vs NE25139T1U72
NE25139-T1 UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET California Eastern Laboratories (CEL) NE25139-T1 vs NE25139-T1
3SK299-U74-A RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC, SO-4 NEC Electronics Group NE25139-T1 vs 3SK299-U74-A
NE25139U71 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, CASE 39, 4 PIN California Eastern Laboratories (CEL) NE25139-T1 vs NE25139U71
3SK299-U71 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MINIMOLD PACKAGE-4 NEC Electronics America Inc NE25139-T1 vs 3SK299-U71
NE25118 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET California Eastern Laboratories (CEL) NE25139-T1 vs NE25118
CF739 RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, Infineon Technologies AG NE25139-T1 vs CF739
NE25139U72 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, CASE 39, 4 PIN California Eastern Laboratories (CEL) NE25139-T1 vs NE25139U72
NE25139U73 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, SOT-143, 4 PIN NEC Electronics America Inc NE25139-T1 vs NE25139U73
NE25139T1U71 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, SOT-143, 4 PIN NEC Electronics America Inc NE25139-T1 vs NE25139T1U71

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