Part Details for 2N6796 by International Rectifier
Overview of 2N6796 by International Rectifier
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for 2N6796
| Part # | Distributor | Description | Stock | Price | Buy | |
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NexGen Digital | 7 |
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ES Components | IR 2N6796 BARE DIE | 642 in Stock |
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RFQ |
Part Details for 2N6796
2N6796 CAD Models
2N6796 Part Data Attributes:
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2N6796
International Rectifier
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Datasheet
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2N6796
International Rectifier
Power Field-Effect Transistor, 8A I(D), 100V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN
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| Pbfree Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC | |
| Part Package Code | BCY | |
| Package Description | HERMETIC SEALED, TO-205AF, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 4.3 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 0.195 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-205AF | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 25 W | |
| Power Dissipation-Max (Abs) | 25 W | |
| Pulsed Drain Current-Max (IDM) | 32 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | MILITARY STANDARD (USA) | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 85 ns | |
| Turn-on Time-Max (ton) | 105 ns |
Alternate Parts for 2N6796
This table gives cross-reference parts and alternative options found for 2N6796. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6796, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| JANTX2N6796 | Small Signal Field-Effect Transistor, 8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN | Microsemi Corporation | 2N6796 vs JANTX2N6796 |
| 2N6796 | Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | Unitrode Corporation | 2N6796 vs 2N6796 |
| JAN2N6796 | Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN | Unitrode Corporation | 2N6796 vs JAN2N6796 |
| IRFF130 | 8A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | 2N6796 vs IRFF130 |
| JANTXV2N6796 | Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | Unitrode Corp (RETIRED) | 2N6796 vs JANTXV2N6796 |
| 2N6796R1 | 8A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | 2N6796 vs 2N6796R1 |
| IRFF130 | 8A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | Intersil Corporation | 2N6796 vs IRFF130 |
| 2N6796PBF | Power Field-Effect Transistor, 8A I(D), 100V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN | International Rectifier | 2N6796 vs 2N6796PBF |
| 2N6796 | Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN | TT Electronics Resistors | 2N6796 vs 2N6796 |
| IRFF130-JQR-B | Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Resistors | 2N6796 vs IRFF130-JQR-B |