Part Details for 2N6788.MODR1 by TT Electronics Resistors
Overview of 2N6788.MODR1 by TT Electronics Resistors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
Part Details for 2N6788.MODR1
2N6788.MODR1 CAD Models
2N6788.MODR1 Part Data Attributes:
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2N6788.MODR1
TT Electronics Resistors
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Datasheet
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2N6788.MODR1
TT Electronics Resistors
Power Field-Effect Transistor, 6A I(D), 100V, 0.345ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TT ELECTRONICS PLC | |
| Package Description | CYLINDRICAL, O-MBCY-W3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 0.345 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-205AF | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 24 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2N6788.MODR1
This table gives cross-reference parts and alternative options found for 2N6788.MODR1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6788.MODR1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFF120 | Power Field-Effect Transistor, 6A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN | International Rectifier | 2N6788.MODR1 vs IRFF120 |
| IRFF120-JQR-BE1 | Power Field-Effect Transistor, 6A I(D), 100V, 0.345ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | TT Electronics Resistors | 2N6788.MODR1 vs IRFF120-JQR-BE1 |
| IRFF120 | Power Field-Effect Transistor, 6A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN | Infineon Technologies AG | 2N6788.MODR1 vs IRFF120 |
| 2N6788-QR-B | 6A, 100V, 0.345ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | 2N6788.MODR1 vs 2N6788-QR-B |
| 2N6788-QR-B | Power Field-Effect Transistor, 6A I(D), 100V, 0.345ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | TT Electronics Resistors | 2N6788.MODR1 vs 2N6788-QR-B |
| IRFF120 | Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | Fairchild Semiconductor Corporation | 2N6788.MODR1 vs IRFF120 |
| 2N6788-QR-BR1 | 6A, 100V, 0.345ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | 2N6788.MODR1 vs 2N6788-QR-BR1 |
| IRFF120 | 6A, 100V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN | Rochester Electronics LLC | 2N6788.MODR1 vs IRFF120 |
| JANTX2N6788 | Power Field-Effect Transistor, 6A I(D), 100V, 0.345ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | International Rectifier | 2N6788.MODR1 vs JANTX2N6788 |
| IRFF120-JQR-BE1 | 6A, 100V, 0.345ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | 2N6788.MODR1 vs IRFF120-JQR-BE1 |