SIR880DP-T1-GE3 vs BSC059N04LSGATMA1 feature comparison

SIR880DP-T1-GE3 Vishay Siliconix

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BSC059N04LSGATMA1 Infineon Technologies AG

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Not Recommended
Ihs Manufacturer VISHAY SILICONIX INFINEON TECHNOLOGIES AG
Part Package Code SOT
Package Description HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 SMALL OUTLINE, R-PDSO-F5
Pin Count 8 8
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 61 mJ 25 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V 40 V
Drain Current-Max (ID) 60 A 16 A
Drain-source On Resistance-Max 0.0067 Ω 0.0059 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-C5 R-PDSO-F8
Number of Elements 1 1
Number of Terminals 5 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 100 A 292 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form C BEND FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code No
Factory Lead Time 16 Weeks
Samacsys Manufacturer Infineon
Additional Feature LOGIC LEVEL COMPATIBLE
JESD-609 Code e3
Moisture Sensitivity Level 1
Terminal Finish Tin (Sn)

Compare SIR880DP-T1-GE3 with alternatives

Compare BSC059N04LSGATMA1 with alternatives