SIR880DP-T1-GE3 vs BSC016N04LSG feature comparison

SIR880DP-T1-GE3 Vishay Intertechnologies

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BSC016N04LSG Infineon Technologies AG

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Rohs Code Yes Yes
Part Life Cycle Code Not Recommended Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC INFINEON TECHNOLOGIES AG
Package Description HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 SMALL OUTLINE, R-PDSO-F5
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 61 mJ 295 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V 40 V
Drain Current-Max (ID) 60 A 100 A
Drain-source On Resistance-Max 0.0067 Ω 0.0023 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-C5 R-PDSO-F8
Number of Elements 1 1
Number of Terminals 5 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 104 W 139 W
Pulsed Drain Current-Max (IDM) 100 A 400 A
Surface Mount YES YES
Terminal Form C BEND FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 40 40
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Pbfree Code Yes
Pin Count 8
JESD-609 Code e3
Moisture Sensitivity Level 1
Qualification Status Not Qualified
Terminal Finish Tin (Sn)

Compare SIR880DP-T1-GE3 with alternatives

Compare BSC016N04LSG with alternatives