SIR880DP-T1-GE3
vs
BSC093N04LSG
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
VISHAY SILICONIX
INFINEON TECHNOLOGIES AG
Part Package Code
SOT
SON
Package Description
HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
TDSON-8
Pin Count
8
8
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
61 mJ
10 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
80 V
40 V
Drain Current-Max (ID)
60 A
13 A
Drain-source On Resistance-Max
0.0067 Ω
0.0093 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-C5
R-PDSO-F8
Number of Elements
1
1
Number of Terminals
5
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
100 A
196 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
C BEND
FLAT
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
40
40
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Pbfree Code
HTS Code
8541.29.00.95
Samacsys Manufacturer
Infineon
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
JESD-609 Code
e3
Moisture Sensitivity Level
1
Operating Temperature-Min
-55 °C
Power Dissipation Ambient-Max
2.5 W
Power Dissipation-Max (Abs)
35 W
Terminal Finish
Tin (Sn)
Compare SIR880DP-T1-GE3 with alternatives
Compare BSC093N04LSG with alternatives