BSC059N04LSGATMA1 vs SIR804DP-T1-GE3 feature comparison

BSC059N04LSGATMA1 Infineon Technologies AG

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SIR804DP-T1-GE3 Vishay Siliconix

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Pbfree Code No
Rohs Code Yes Yes
Part Life Cycle Code Not Recommended Transferred
Ihs Manufacturer INFINEON TECHNOLOGIES AG VISHAY SILICONIX
Package Description SMALL OUTLINE, R-PDSO-F5 HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
Pin Count 8 8
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer Infineon
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 25 mJ 61 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V 100 V
Drain Current-Max (ID) 16 A 60 A
Drain-source On Resistance-Max 0.0059 Ω 0.0078 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8 R-XDSO-C5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 8 5
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 292 A 100 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin (Sn)
Terminal Form FLAT C BEND
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Part Package Code SOT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40

Compare BSC059N04LSGATMA1 with alternatives

Compare SIR804DP-T1-GE3 with alternatives