BSC059N04LSGATMA1
vs
SIR804DP-T1-GE3
feature comparison
All Stats
Differences Only
Pbfree Code
No
Rohs Code
Yes
Yes
Part Life Cycle Code
Not Recommended
Transferred
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
VISHAY SILICONIX
Package Description
SMALL OUTLINE, R-PDSO-F5
HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
Pin Count
8
8
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Factory Lead Time
16 Weeks
Samacsys Manufacturer
Infineon
Additional Feature
LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)
25 mJ
61 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
40 V
100 V
Drain Current-Max (ID)
16 A
60 A
Drain-source On Resistance-Max
0.0059 Ω
0.0078 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-F8
R-XDSO-C5
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
8
5
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
UNSPECIFIED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
292 A
100 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Tin (Sn)
Terminal Form
FLAT
C BEND
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Part Package Code
SOT
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Compare BSC059N04LSGATMA1 with alternatives
Compare SIR804DP-T1-GE3 with alternatives