SIR804DP-T1-GE3
vs
SIR426DP-T1-GE3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
VISHAY SILICONIX
VISHAY SILICONIX
Part Package Code
SOT
SOT
Package Description
HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
SMALL OUTLINE, R-XDSO-C5
Pin Count
8
8
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
61 mJ
20 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
40 V
Drain Current-Max (ID)
60 A
30 A
Drain-source On Resistance-Max
0.0078 Ω
0.0105 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-XDSO-C5
R-XDSO-C5
Number of Elements
1
1
Number of Terminals
5
5
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
UNSPECIFIED
UNSPECIFIED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
100 A
70 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
40
30
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Pbfree Code
JESD-609 Code
e3
Power Dissipation-Max (Abs)
41.7 W
Terminal Finish
MATTE TIN
Compare SIR804DP-T1-GE3 with alternatives
Compare SIR426DP-T1-GE3 with alternatives