SIR804DP-T1-GE3 vs BSC093N04LSGATMA1 feature comparison

SIR804DP-T1-GE3 Vishay Siliconix

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BSC093N04LSGATMA1 Infineon Technologies AG

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer VISHAY SILICONIX INFINEON TECHNOLOGIES AG
Part Package Code SOT SON
Package Description HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 SMALL OUTLINE, R-PDSO-F5
Pin Count 8 8
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Vishay Infineon
Avalanche Energy Rating (Eas) 61 mJ 10 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 40 V
Drain Current-Max (ID) 60 A 13 A
Drain-source On Resistance-Max 0.0078 Ω 0.0093 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XDSO-C5 R-PDSO-F8
Number of Elements 1 1
Number of Terminals 5 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material UNSPECIFIED PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 100 A 196 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form C BEND FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 40 NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Pbfree Code No
Factory Lead Time 16 Weeks, 5 Days
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
JESD-609 Code e3
Moisture Sensitivity Level 1
Terminal Finish Tin (Sn)

Compare SIR804DP-T1-GE3 with alternatives

Compare BSC093N04LSGATMA1 with alternatives