Part Details for SIR804DP-T1-GE3 by Vishay Siliconix
Overview of SIR804DP-T1-GE3 by Vishay Siliconix
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SIR804DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIR804DP-T1-GE3CT-ND
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DigiKey | MOSFET N-CH 100V 60A PPAK SO-8 Min Qty: 1 Lead time: 28 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1199 In Stock |
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$1.1500 / $3.5500 | Buy Now |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 6000 |
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$1.4900 / $1.6000 | Buy Now |
Part Details for SIR804DP-T1-GE3
SIR804DP-T1-GE3 CAD Models
SIR804DP-T1-GE3 Part Data Attributes
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SIR804DP-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SIR804DP-T1-GE3
Vishay Siliconix
Power Field-Effect Transistor, 60A I(D), 100V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | SOT | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 61 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 60 A | |
| Drain-source On Resistance-Max | 0.0078 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XDSO-C5 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIR804DP-T1-GE3
This table gives cross-reference parts and alternative options found for SIR804DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIR804DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SIR804DP-T1-GE3 | Vishay Intertechnologies | $2.0950 | Power Field-Effect Transistor, 60A I(D), 100V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | SIR804DP-T1-GE3 vs SIR804DP-T1-GE3 |
| BSC360N15NS3G | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 33A I(D), 150V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | SIR804DP-T1-GE3 vs BSC360N15NS3G |
| SI7738DP-T1-GE3 | Vishay Intertechnologies | $1.7992 | Power Field-Effect Transistor, 7.7A I(D), 150V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | SIR804DP-T1-GE3 vs SI7738DP-T1-GE3 |
| BSC360N15NS3GATMA1 | Infineon Technologies AG | $1.2592 | Power Field-Effect Transistor, 33A I(D), 150V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | SIR804DP-T1-GE3 vs BSC360N15NS3GATMA1 |
| BSC093N04LSGATMA1 | Infineon Technologies AG | $0.3521 | Power Field-Effect Transistor, 13A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, MO-240, TDSON-8 | SIR804DP-T1-GE3 vs BSC093N04LSGATMA1 |
| BSC016N04LSG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 100A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | SIR804DP-T1-GE3 vs BSC016N04LSG |
| BSC093N04LSG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 13A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, MO-240, TDSON-8 | SIR804DP-T1-GE3 vs BSC093N04LSG |
| SIR880DP-T1-GE3 | Vishay Intertechnologies | $1.8344 | Power Field-Effect Transistor, 60A I(D), 80V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | SIR804DP-T1-GE3 vs SIR880DP-T1-GE3 |
| SIR166DP-T1-GE3 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 40A I(D), 30V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | SIR804DP-T1-GE3 vs SIR166DP-T1-GE3 |
| BSC520N15NS3G | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 21A I(D), 150V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | SIR804DP-T1-GE3 vs BSC520N15NS3G |