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Transistors Power Field-Effect Transistors SIR804DP-T1-GE3

Transistors
SIR804DP-T1-GE3
Description: Power Field-Effect Transistor, 60A I(D), 100V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8

Overview of SIR804DP-T1-GE3 by Vishay Siliconix

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Available Datasheets

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Price & Stock for SIR804DP-T1-GE3 by Vishay Siliconix

Part # Manufacturer Description Stock Price Buy
DISTI # SIR804DP-T1-GE3CT-ND
DigiKey MOSFET N-CH 100V 60A PPAK SO-8 Min Qty: 1 Lead time: 28 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 1769
In Stock
  • 1 $2.7400
  • 10 $2.2770
  • 100 $1.8119
  • 500 $1.5332
  • 1,000 $1.3009
  • 3,000 $1.2358
  • 6,000 $1.1894
$1.1894 / $2.7400 Buy Now

CAD Models for SIR804DP-T1-GE3 by Vishay Siliconix
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Part Data Attributes for SIR804DP-T1-GE3 by Vishay Siliconix
Parametric Data

SIR804DP-T1-GE3
Vishay Siliconix
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
VISHAY SILICONIX
Part Package Code
SOT
Package Description
HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
Pin Count
8
Reach Compliance Code
unknown
ECCN Code
EAR99
Samacsys Manufacturer
Vishay
Avalanche Energy Rating (Eas)
61 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
60 A
Drain-source On Resistance-Max
0.0078 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-XDSO-C5
Number of Elements
1
Number of Terminals
5
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
100 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
C BEND
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
40
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. SIR804DP-T1-GE3
    Vishay Siliconix
    Power Field-Effect Transistor, 60A I(D), 100V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
    VS

Alternate Parts for SIR804DP-T1-GE3

This table gives cross-reference parts and alternative options found for SIR804DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIR804DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
SIR804DP-T1-GE3 Power Field-Effect Transistor, 60A I(D), 100V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 Vishay Intertechnologies SIR804DP-T1-GE3 vs SIR804DP-T1-GE3
Part Number Description Manufacturer Compare
SI7738DP-T1-GE3 Power Field-Effect Transistor, 7.7A I(D), 150V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 Vishay Intertechnologies SIR804DP-T1-GE3 vs SI7738DP-T1-GE3
BSC027N04LSG Power Field-Effect Transistor, 24A I(D), 40V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG SIR804DP-T1-GE3 vs BSC027N04LSG
BSC520N15NS3G Power Field-Effect Transistor, 21A I(D), 150V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG SIR804DP-T1-GE3 vs BSC520N15NS3G
BSC059N04LSG Power Field-Effect Transistor, 16A I(D), 40V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG SIR804DP-T1-GE3 vs BSC059N04LSG
SIR862DP-T1-GE3 Power Field-Effect Transistor, 50A I(D), 25V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 Vishay Intertechnologies SIR804DP-T1-GE3 vs SIR862DP-T1-GE3
BSC059N04LSGATMA1 Power Field-Effect Transistor, 16A I(D), 40V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG SIR804DP-T1-GE3 vs BSC059N04LSGATMA1
SIR836DP-T1-GE3 Power Field-Effect Transistor, 21A I(D), 40V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 Vishay Intertechnologies SIR804DP-T1-GE3 vs SIR836DP-T1-GE3
SIR166DP-T1-GE3 Power Field-Effect Transistor, 40A I(D), 30V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 Vishay Intertechnologies SIR804DP-T1-GE3 vs SIR166DP-T1-GE3
BSC360N15NS3G Power Field-Effect Transistor, 33A I(D), 150V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG SIR804DP-T1-GE3 vs BSC360N15NS3G
BSC093N04LSGATMA1 Power Field-Effect Transistor, 13A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, MO-240, TDSON-8 Infineon Technologies AG SIR804DP-T1-GE3 vs BSC093N04LSGATMA1

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