RFD20N03SM9A
vs
BUK7509-75A
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
INTERSIL CORP
|
PHILIPS SEMICONDUCTORS
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
MEGAFET
|
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
| DS Breakdown Voltage-Min |
30 V
|
|
| Drain Current-Max (ID) |
20 A
|
75 A
|
| Drain-source On Resistance-Max |
0.025 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-252AA
|
|
| JESD-30 Code |
R-PSSO-G2
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
SINGLE
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
4
|
3
|
| Package Description |
|
,
|
| JESD-609 Code |
|
e3
|
| Operating Temperature-Max |
|
175 °C
|
| Power Dissipation-Max (Abs) |
|
230 W
|
| Terminal Finish |
|
Matte Tin (Sn)
|
|
|
|
Compare RFD20N03SM9A with alternatives