RFD20N03SM9A vs RFD16N06LESM9A feature comparison

RFD20N03SM9A Harris Semiconductor

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RFD16N06LESM9A Fairchild Semiconductor Corporation

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer HARRIS SEMICONDUCTOR FAIRCHILD SEMICONDUCTOR CORP
Package Description SMALL OUTLINE, R-PSSO-G2 TO-252AA, 3 PIN
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Additional Feature MEGAFET
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 60 V
Drain Current-Max (ID) 20 A 16 A
Drain-source On Resistance-Max 0.025 Ω 0.047 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA TO-252AA
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 4 4
Pbfree Code Yes
Rohs Code Yes
Part Package Code DPAK
Pin Count 3
Manufacturer Package Code TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
HTS Code 8541.29.00.95
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 175 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max (Abs) 90 W
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

Compare RFD20N03SM9A with alternatives

Compare RFD16N06LESM9A with alternatives