Part Details for BUK7509-75A by Philips Semiconductors
Overview of BUK7509-75A by Philips Semiconductors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| RJP1CS05DWT-80#X0 | Renesas Electronics Corporation | IGBT 1250V 75A Chip | |
| RJP1CS05DWA-80#W0 | Renesas Electronics Corporation | IGBT 1250V 75A Wafer | |
| RJP65S05DWT-80#YB1 | Renesas Electronics Corporation | IGBT 650V 75A Chip |
Part Details for BUK7509-75A
BUK7509-75A CAD Models
BUK7509-75A Part Data Attributes
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BUK7509-75A
Philips Semiconductors
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Datasheet
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BUK7509-75A
Philips Semiconductors
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | PHILIPS SEMICONDUCTORS | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 75 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 230 W | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) |