RFD20N03SM9A
vs
RFD14N06LSM
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
INTERSIL CORP
HARRIS SEMICONDUCTOR
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
Additional Feature
MEGAFET
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
60 V
Drain Current-Max (ID)
20 A
14 A
Drain-source On Resistance-Max
0.025 Ω
0.1 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
TO-252AA
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
4
3
Package Description
SMALL OUTLINE, R-PSSO-G2
HTS Code
8541.29.00.95
JESD-609 Code
e0
Operating Temperature-Max
175 °C
Power Dissipation Ambient-Max
48 W
Power Dissipation-Max (Abs)
40 W
Terminal Finish
TIN LEAD
Turn-off Time-Max (toff)
100 ns
Turn-on Time-Max (ton)
60 ns
Compare RFD20N03SM9A with alternatives
Compare RFD14N06LSM with alternatives