MUN5111DW1T1
vs
MUN5111DW1T1G
feature comparison
Part Life Cycle Code |
Contact Manufacturer
|
Active
|
Ihs Manufacturer |
LESHAN RADIO CO LTD
|
ONSEMI
|
Package Description |
,
|
CASE 419B-02, SC-88, 6 PIN
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
DC Current Gain-Min (hFE) |
35
|
35
|
Number of Elements |
2
|
2
|
Polarity/Channel Type |
PNP
|
PNP
|
Power Dissipation-Max (Abs) |
0.385 W
|
0.15 W
|
Surface Mount |
YES
|
YES
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
6
|
1
|
Pbfree Code |
|
Yes
|
Part Package Code |
|
SC-88/SC70-6/SOT-363 6 LEAD
|
Pin Count |
|
6
|
Manufacturer Package Code |
|
419B-02
|
Factory Lead Time |
|
26 Weeks
|
Samacsys Manufacturer |
|
onsemi
|
Additional Feature |
|
BUILT-IN BIAS RESISTOR RATIO IS 1
|
Collector-Emitter Voltage-Max |
|
50 V
|
Configuration |
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
|
JESD-30 Code |
|
R-PDSO-G6
|
JESD-609 Code |
|
e3
|
Moisture Sensitivity Level |
|
1
|
Number of Terminals |
|
6
|
Operating Temperature-Max |
|
150 °C
|
Package Body Material |
|
PLASTIC/EPOXY
|
Package Shape |
|
RECTANGULAR
|
Package Style |
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
|
260
|
Qualification Status |
|
Not Qualified
|
Terminal Finish |
|
Matte Tin (Sn) - annealed
|
Terminal Form |
|
GULL WING
|
Terminal Position |
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
|
30
|
Transistor Application |
|
SWITCHING
|
|
|
|
Compare MUN5111DW1T1 with alternatives
Compare MUN5111DW1T1G with alternatives