We use Cookies to give you best experience on our website. By using our website and services, you expressly agree to the placement of our performance, functionality and advertising cookies. Please see our Privacy Policy for more information.

Register or Sign In

MP3506(W) vs SB356G feature comparison

MP3506(W) Galaxy Microelectronics

Buy Now Datasheet

SB356G Taiwan Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Breakdown Voltage-Min 600 V 600 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.1 V
Non-rep Pk Forward Current-Max 400 A 400 A
Number of Elements 4 4
Number of Phases 1 1
Operating Temperature-Max 125 °C 150 °C
Output Current-Max 35 A 35 A
Peak Reflow Temperature (Cel) 260 260
Rep Pk Reverse Voltage-Max 600 V 600 V
Surface Mount NO NO
Base Number Matches 2 1
Case Connection ISOLATED
Moisture Sensitivity Level 1
Diodes » Bridge Rectifier Diodes
Diodes » Bridge Rectifier Diodes

Compare MP3506(W) with alternatives

Compare SB356G with alternatives