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SB356G vs GBU35J feature comparison

SB356G Taiwan Semiconductor

Buy Now Datasheet

GBU35J Galaxy Semi-Conductor Co Ltd

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Contact Manufacturer
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD GALAXY SEMI-CONDUCTOR CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Breakdown Voltage-Min 600 V 600 V
Case Connection ISOLATED ISOLATED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.1 V
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 400 A 400 A
Number of Elements 4 4
Number of Phases 1 1
Operating Temperature-Max 150 °C 155 °C
Output Current-Max 35 A 35 A
Peak Reflow Temperature (Cel) 260 260
Rep Pk Reverse Voltage-Max 600 V 600 V
Surface Mount NO NO
Base Number Matches 1 2
Diodes » Bridge Rectifier Diodes
Diodes » Bridge Rectifier Diodes

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