MM74C910
vs
X2210DM/5
feature comparison
All Stats
Differences Only
Rohs Code
No
No
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
NATIONAL SEMICONDUCTOR CORP
XICOR INC
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.41
Access Time-Max
700 ns
300 ns
I/O Type
SEPARATE
JESD-30 Code
R-XDIP-T18
R-GDIP-T18
JESD-609 Code
e0
e0
Memory IC Type
STANDARD SRAM
NON-VOLATILE SRAM
Memory Width
4
4
Number of Terminals
18
18
Number of Words
64 words
64 words
Number of Words Code
64
64
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
85 °C
125 °C
Operating Temperature-Min
-40 °C
-55 °C
Organization
64X4
64X4
Output Characteristics
3-STATE
Package Body Material
CERAMIC
CERAMIC, GLASS-SEALED
Package Code
DIP
DIP
Package Equivalence Code
DIP18,.3
DIP18,.3
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Parallel/Serial
PARALLEL
PARALLEL
Qualification Status
Not Qualified
Not Qualified
Standby Current-Max
0.0003 A
Supply Current-Max
0.0003 mA
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
NO
NO
Technology
CMOS
CMOS
Temperature Grade
INDUSTRIAL
MILITARY
Terminal Finish
Tin/Lead (Sn/Pb)
TIN LEAD
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Pitch
2.54 mm
2.54 mm
Terminal Position
DUAL
DUAL
Base Number Matches
6
1
Package Description
HERMETIC SEALED, CERDIP-18
Memory Density
256 bit
Number of Functions
1
Supply Voltage-Max (Vsup)
5.5 V
Supply Voltage-Min (Vsup)
4.5 V
Compare MM74C910 with alternatives
Compare X2210DM/5 with alternatives