MB8281-15P
vs
MB8281-15Z
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
FUJITSU SEMICONDUCTOR AMERICA INC
|
FUJITSU SEMICONDUCTOR AMERICA INC
|
| Package Description |
DIP,
|
DIP,
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.02
|
8542.32.00.02
|
| Access Mode |
STATIC COLUMN
|
STATIC COLUMN
|
| Access Time-Max |
150 ns
|
150 ns
|
| Additional Feature |
RAS ONLY REFRESH
|
RAS ONLY REFRESH
|
| JESD-30 Code |
R-PDIP-T16
|
R-GDIP-T16
|
| Length |
19.35 mm
|
19.585 mm
|
| Memory Density |
65536 bit
|
65536 bit
|
| Memory IC Type |
STATIC COLUMN DRAM
|
STATIC COLUMN DRAM
|
| Memory Width |
1
|
1
|
| Number of Functions |
1
|
1
|
| Number of Ports |
1
|
1
|
| Number of Terminals |
16
|
16
|
| Number of Words |
65536 words
|
65536 words
|
| Number of Words Code |
64000
|
64000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Organization |
64KX1
|
64KX1
|
| Output Characteristics |
3-STATE
|
3-STATE
|
| Package Body Material |
PLASTIC/EPOXY
|
CERAMIC, GLASS-SEALED
|
| Package Code |
DIP
|
DIP
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Refresh Cycles |
128
|
128
|
| Seated Height-Max |
4.65 mm
|
5.08 mm
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
4.5 V
|
4.5 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
NMOS
|
NMOS
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Pitch |
2.54 mm
|
2.54 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Width |
7.62 mm
|
7.62 mm
|
| Base Number Matches |
2
|
2
|
|
|
|
Compare MB8281-15P with alternatives
Compare MB8281-15Z with alternatives