LM111J-8RLQMLV vs LM111MD8 feature comparison

LM111J-8RLQMLV National Semiconductor Corporation

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LM111MD8 National Semiconductor Corporation

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Rohs Code No Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP NATIONAL SEMICONDUCTOR CORP
Part Package Code DIP WAFER
Package Description DIP, DIP8,.3 DIE, DIE OR CHIP
Pin Count 8
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.39.00.01 8542.39.00.01
Amplifier Type COMPARATOR COMPARATOR
Average Bias Current-Max (IIB) 0.15 µA 0.15 µA
Bias Current-Max (IIB) @25C 0.1 µA
Input Offset Voltage-Max 4000 µV 3000 µV
JESD-30 Code R-GDIP-T8 X-XUUC-N
JESD-609 Code e0
Moisture Sensitivity Level 1 1
Neg Supply Voltage Limit-Max -18 V -18 V
Neg Supply Voltage-Nom (Vsup) -15 V -15 V
Number of Functions 1 1
Number of Terminals 8
Operating Temperature-Max 125 °C 125 °C
Operating Temperature-Min -55 °C -55 °C
Output Type OPEN-COLLECTOR OPEN-DRAIN
Package Body Material CERAMIC, GLASS-SEALED UNSPECIFIED
Package Code DIP DIE
Package Equivalence Code DIP8,.3 DIE OR CHIP
Package Shape RECTANGULAR UNSPECIFIED
Package Style IN-LINE UNCASED CHIP
Peak Reflow Temperature (Cel) 260 260
Qualification Status Not Qualified Not Qualified
Response Time-Nom 200 ns 200 ns
Screening Level MIL-PRF-38535 Class V 38535Q/M;38534H;883B
Seated Height-Max 5.08 mm
Supply Current-Max 6 mA 7 mA
Supply Voltage Limit-Max 18 V 18 V
Supply Voltage-Nom (Vsup) 15 V 15 V
Surface Mount NO YES
Technology BIPOLAR BIPOLAR
Temperature Grade MILITARY MILITARY
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE NO LEAD
Terminal Pitch 2.54 mm
Terminal Position DUAL UPPER
Time@Peak Reflow Temperature-Max (s) 40 40
Total Dose 50k Rad(Si) V
Width 7.62 mm
Base Number Matches 2 2

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