LM111J-8RLQMLV
vs
LM111MD8
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
NATIONAL SEMICONDUCTOR CORP
NATIONAL SEMICONDUCTOR CORP
Part Package Code
DIP
WAFER
Package Description
DIP, DIP8,.3
DIE, DIE OR CHIP
Pin Count
8
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8542.39.00.01
8542.39.00.01
Amplifier Type
COMPARATOR
COMPARATOR
Average Bias Current-Max (IIB)
0.15 µA
0.15 µA
Bias Current-Max (IIB) @25C
0.1 µA
Input Offset Voltage-Max
4000 µV
3000 µV
JESD-30 Code
R-GDIP-T8
X-XUUC-N
JESD-609 Code
e0
Moisture Sensitivity Level
1
1
Neg Supply Voltage Limit-Max
-18 V
-18 V
Neg Supply Voltage-Nom (Vsup)
-15 V
-15 V
Number of Functions
1
1
Number of Terminals
8
Operating Temperature-Max
125 °C
125 °C
Operating Temperature-Min
-55 °C
-55 °C
Output Type
OPEN-COLLECTOR
OPEN-DRAIN
Package Body Material
CERAMIC, GLASS-SEALED
UNSPECIFIED
Package Code
DIP
DIE
Package Equivalence Code
DIP8,.3
DIE OR CHIP
Package Shape
RECTANGULAR
UNSPECIFIED
Package Style
IN-LINE
UNCASED CHIP
Peak Reflow Temperature (Cel)
260
260
Qualification Status
Not Qualified
Not Qualified
Response Time-Nom
200 ns
200 ns
Screening Level
MIL-PRF-38535 Class V
38535Q/M;38534H;883B
Seated Height-Max
5.08 mm
Supply Current-Max
6 mA
7 mA
Supply Voltage Limit-Max
18 V
18 V
Supply Voltage-Nom (Vsup)
15 V
15 V
Surface Mount
NO
YES
Technology
BIPOLAR
BIPOLAR
Temperature Grade
MILITARY
MILITARY
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
THROUGH-HOLE
NO LEAD
Terminal Pitch
2.54 mm
Terminal Position
DUAL
UPPER
Time@Peak Reflow Temperature-Max (s)
40
40
Total Dose
50k Rad(Si) V
Width
7.62 mm
Base Number Matches
2
2
Compare LM111J-8RLQMLV with alternatives
Compare LM111MD8 with alternatives