LM111MD8
vs
LM111WGRLQMLV
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
NATIONAL SEMICONDUCTOR CORP
NATIONAL SEMICONDUCTOR CORP
Part Package Code
WAFER
SOIC
Package Description
DIE, DIE OR CHIP
SOP, SOP10,.4
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8542.39.00.01
8542.39.00.01
Amplifier Type
COMPARATOR
COMPARATOR
Average Bias Current-Max (IIB)
0.15 µA
0.15 µA
Input Offset Voltage-Max
3000 µV
4000 µV
JESD-30 Code
X-XUUC-N
R-GDSO-G10
Moisture Sensitivity Level
1
1
Neg Supply Voltage Limit-Max
-18 V
-18 V
Neg Supply Voltage-Nom (Vsup)
-15 V
-15 V
Number of Functions
1
1
Operating Temperature-Max
125 °C
125 °C
Operating Temperature-Min
-55 °C
-55 °C
Output Type
OPEN-DRAIN
OPEN-COLLECTOR
Package Body Material
UNSPECIFIED
CERAMIC, GLASS-SEALED
Package Code
DIE
SOP
Package Equivalence Code
DIE OR CHIP
SOP10,.4
Package Shape
UNSPECIFIED
RECTANGULAR
Package Style
UNCASED CHIP
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Qualification Status
Not Qualified
Not Qualified
Response Time-Nom
200 ns
200 ns
Screening Level
38535Q/M;38534H;883B
MIL-PRF-38535 Class V
Supply Current-Max
7 mA
6 mA
Supply Voltage Limit-Max
18 V
18 V
Supply Voltage-Nom (Vsup)
15 V
15 V
Surface Mount
YES
YES
Technology
BIPOLAR
BIPOLAR
Temperature Grade
MILITARY
MILITARY
Terminal Form
NO LEAD
GULL WING
Terminal Position
UPPER
DUAL
Time@Peak Reflow Temperature-Max (s)
40
40
Base Number Matches
2
2
Pin Count
10
Samacsys Manufacturer
National Semiconductor
Bias Current-Max (IIB) @25C
0.1 µA
JESD-609 Code
e0
Number of Terminals
10
Seated Height-Max
2.33 mm
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Pitch
1.27 mm
Total Dose
50k Rad(Si) V
Width
6.12 mm
Compare LM111MD8 with alternatives
Compare LM111WGRLQMLV with alternatives