LH53B8P00BD
vs
KM23C8100H-12
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
SHARP CORP
|
SAMSUNG SEMICONDUCTOR INC
|
Package Description |
DIP-42
|
DIP, DIP42,.6
|
Reach Compliance Code |
unknown
|
compliant
|
Access Time-Max |
120 ns
|
120 ns
|
Additional Feature |
CONFIGURABLE AS 512K X 16
|
|
JESD-30 Code |
R-PDIP-T42
|
R-PDIP-T42
|
Length |
53.8 mm
|
52.43 mm
|
Memory Density |
8388608 bit
|
8388608 bit
|
Memory IC Type |
MASK ROM
|
MASK ROM
|
Memory Width |
8
|
16
|
Number of Functions |
1
|
1
|
Number of Terminals |
42
|
42
|
Number of Words |
1048576 words
|
524288 words
|
Number of Words Code |
1000000
|
512000
|
Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
Organization |
1MX8
|
512KX16
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
DIP
|
DIP
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
IN-LINE
|
Parallel/Serial |
PARALLEL
|
PARALLEL
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Seated Height-Max |
5.4 mm
|
5.08 mm
|
Supply Current-Max |
0.05 mA
|
0.06 mA
|
Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
Supply Voltage-Min (Vsup) |
4.5 V
|
4.5 V
|
Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
Surface Mount |
NO
|
NO
|
Technology |
CMOS
|
CMOS
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Pitch |
2.54 mm
|
2.54 mm
|
Terminal Position |
DUAL
|
DUAL
|
Width |
15.24 mm
|
15.24 mm
|
Base Number Matches |
1
|
1
|
Pbfree Code |
|
No
|
Rohs Code |
|
No
|
Part Package Code |
|
DIP
|
Pin Count |
|
42
|
ECCN Code |
|
EAR99
|
HTS Code |
|
8542.32.00.71
|
Alternate Memory Width |
|
8
|
JESD-609 Code |
|
e0
|
Operating Temperature-Max |
|
70 °C
|
Operating Temperature-Min |
|
|
Output Characteristics |
|
3-STATE
|
Package Equivalence Code |
|
DIP42,.6
|
Standby Current-Max |
|
0.00005 A
|
Temperature Grade |
|
COMMERCIAL
|
Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare LH53B8P00BD with alternatives
Compare KM23C8100H-12 with alternatives