KBPC2510W
vs
GBPC2510-S
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Contact Manufacturer
Contact Manufacturer
Ihs Manufacturer
JGD SEMICONDUCTORS CO LTD
FORMOSA MICROSEMI CO LTD
Reach Compliance Code
unknown
unknown
Breakdown Voltage-Min
1000 V
1000 V
Case Connection
ISOLATED
Configuration
BRIDGE, 4 ELEMENTS
BRIDGE, 4 ELEMENTS
Diode Type
BRIDGE RECTIFIER DIODE
BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF)
1.1 V
1.1 V
Non-rep Pk Forward Current-Max
300 A
300 A
Number of Elements
4
4
Number of Phases
1
1
Operating Temperature-Max
125 °C
150 °C
Output Current-Max
25 A
25 A
Rep Pk Reverse Voltage-Max
1000 V
1000 V
Surface Mount
NO
NO
Base Number Matches
1
1
Rohs Code
Yes
ECCN Code
EAR99
HTS Code
8541.10.00.80
Diode Element Material
SILICON
JESD-30 Code
R-PSFM-T4
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Package Shape
SQUARE
Package Style
FLANGE MOUNT
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Compare KBPC2510W with alternatives
Compare GBPC2510-S with alternatives