GBPC2510-S
vs
SB2510GM
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Contact Manufacturer
Obsolete
Ihs Manufacturer
FORMOSA MICROSEMI CO LTD
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
Breakdown Voltage-Min
1000 V
1000 V
Configuration
BRIDGE, 4 ELEMENTS
BRIDGE, 4 ELEMENTS
Diode Element Material
SILICON
Diode Type
BRIDGE RECTIFIER DIODE
BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF)
1.1 V
1.1 V
JESD-30 Code
R-PSFM-T4
Non-rep Pk Forward Current-Max
300 A
300 A
Number of Elements
4
4
Number of Phases
1
1
Number of Terminals
4
Operating Temperature-Max
150 °C
150 °C
Output Current-Max
25 A
25 A
Package Body Material
PLASTIC/EPOXY
Package Shape
SQUARE
Package Style
FLANGE MOUNT
Rep Pk Reverse Voltage-Max
1000 V
1000 V
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Base Number Matches
1
1
Case Connection
ISOLATED
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Compare GBPC2510-S with alternatives
Compare SB2510GM with alternatives