K7R161882B-FI25
vs
IS61QDB41M18A-250B3LI
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
INTEGRATED SILICON SOLUTION INC
Package Description
BGA, BGA165,11X15,40
TBGA, BGA165,11X15,40
Reach Compliance Code
unknown
compliant
ECCN Code
3A991.B.2.A
3A991.B.2.A
HTS Code
8542.32.00.41
8542.32.00.41
Access Time-Max
0.45 ns
0.45 ns
Clock Frequency-Max (fCLK)
250 MHz
250 MHz
I/O Type
SEPARATE
SEPARATE
JESD-30 Code
R-PBGA-B165
R-PBGA-B165
Memory Density
18874368 bit
18874368 bit
Memory IC Type
STANDARD SRAM
QDR SRAM
Memory Width
18
18
Moisture Sensitivity Level
1
Number of Terminals
165
165
Number of Words
1048576 words
1048576 words
Number of Words Code
1000000
1000000
Operating Mode
SYNCHRONOUS
SYNCHRONOUS
Organization
1MX18
1MX18
Output Characteristics
3-STATE
3-STATE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
BGA
TBGA
Package Equivalence Code
BGA165,11X15,40
BGA165,11X15,40
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
GRID ARRAY
GRID ARRAY, THIN PROFILE
Parallel/Serial
PARALLEL
PARALLEL
Qualification Status
Not Qualified
Not Qualified
Standby Current-Max
0.28 A
0.27 A
Standby Voltage-Min
1.7 V
1.7 V
Supply Current-Max
0.5 mA
0.65 mA
Surface Mount
YES
YES
Technology
CMOS
CMOS
Terminal Form
BALL
BALL
Terminal Pitch
1 mm
1 mm
Terminal Position
BOTTOM
BOTTOM
Base Number Matches
1
1
Length
15 mm
Number of Functions
1
Operating Temperature-Max
85 °C
Operating Temperature-Min
-40 °C
Seated Height-Max
1.2 mm
Supply Voltage-Max (Vsup)
1.89 V
Supply Voltage-Min (Vsup)
1.71 V
Supply Voltage-Nom (Vsup)
1.8 V
Temperature Grade
INDUSTRIAL
Width
13 mm
Compare K7R161882B-FI25 with alternatives
Compare IS61QDB41M18A-250B3LI with alternatives