K7R161882B-FI25 vs IS61QDB41M18A-250B3 feature comparison

K7R161882B-FI25 Samsung Semiconductor

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IS61QDB41M18A-250B3 Integrated Silicon Solution Inc

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC INTEGRATED SILICON SOLUTION INC
Package Description BGA, BGA165,11X15,40 13 X 15 MM, 1.20 MM HEIGHT, TFBGA-165
Reach Compliance Code unknown compliant
ECCN Code 3A991.B.2.A 3A991.B.2.A
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 0.45 ns 0.45 ns
Clock Frequency-Max (fCLK) 250 MHz 250 MHz
I/O Type SEPARATE SEPARATE
JESD-30 Code R-PBGA-B165 R-PBGA-B165
Memory Density 18874368 bit 18874368 bit
Memory IC Type STANDARD SRAM QDR SRAM
Memory Width 18 18
Moisture Sensitivity Level 1
Number of Terminals 165 165
Number of Words 1048576 words 1048576 words
Number of Words Code 1000000 1000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Organization 1MX18 1MX18
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code BGA TBGA
Package Equivalence Code BGA165,11X15,40 BGA165,11X15,40
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY GRID ARRAY, THIN PROFILE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Standby Current-Max 0.28 A 0.27 A
Standby Voltage-Min 1.7 V 1.7 V
Supply Current-Max 0.5 mA 0.65 mA
Surface Mount YES YES
Technology CMOS CMOS
Terminal Form BALL BALL
Terminal Pitch 1 mm 1 mm
Terminal Position BOTTOM BOTTOM
Base Number Matches 1 1
Length 15 mm
Number of Functions 1
Operating Temperature-Max 70 °C
Operating Temperature-Min
Seated Height-Max 1.2 mm
Supply Voltage-Max (Vsup) 1.89 V
Supply Voltage-Min (Vsup) 1.71 V
Supply Voltage-Nom (Vsup) 1.8 V
Temperature Grade COMMERCIAL
Width 13 mm

Compare K7R161882B-FI25 with alternatives

Compare IS61QDB41M18A-250B3 with alternatives