K7M163645A-FC200 vs GS8161E36DD-150 feature comparison

K7M163645A-FC200 Samsung Semiconductor

Buy Now Datasheet

GS8161E36DD-150 GSI Technology

Buy Now Datasheet
Rohs Code No No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC GSI TECHNOLOGY
Part Package Code BGA BGA
Package Description LBGA, LBGA,
Pin Count 165 165
Reach Compliance Code compliant compliant
ECCN Code 3A991.B.2.A 3A991.B.2.B
HTS Code 8542.32.00.41 8542.32.00.41
Additional Feature PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY
JESD-30 Code R-PBGA-B165 R-PBGA-B165
JESD-609 Code e0
Length 15 mm 15 mm
Memory Density 18874368 bit 18874368 bit
Memory IC Type ZBT SRAM CACHE SRAM
Memory Width 36 36
Number of Functions 1 1
Number of Terminals 165 165
Number of Words 524288 words 524288 words
Number of Words Code 512000 512000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 512KX36 512KX36
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code LBGA LBGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1.4 mm 1.4 mm
Supply Voltage-Max (Vsup) 3.465 V 2.7 V
Supply Voltage-Min (Vsup) 3.135 V 2.3 V
Supply Voltage-Nom (Vsup) 3.3 V 2.5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Finish TIN LEAD
Terminal Form BALL BALL
Terminal Pitch 1 mm 1 mm
Terminal Position BOTTOM BOTTOM
Width 13 mm 13 mm
Base Number Matches 1 1
Access Time-Max 7.5 ns
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare K7M163645A-FC200 with alternatives

Compare GS8161E36DD-150 with alternatives