K7A801800M-HC200
vs
IDT71V659S80BG
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
INTEGRATED DEVICE TECHNOLOGY INC
|
Part Package Code |
BGA
|
BGA
|
Package Description |
BGA,
|
BGA,
|
Pin Count |
119
|
119
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
3A991.B.2.A
|
3A991.B.2.A
|
HTS Code |
8542.32.00.41
|
8542.32.00.41
|
Access Time-Max |
3.1 ns
|
8 ns
|
Additional Feature |
PIPELINED ARCHITECTURE
|
ALSO REQUIRES 2.5V I/O SUPPLY
|
JESD-30 Code |
R-PBGA-B119
|
R-PBGA-B119
|
Length |
22 mm
|
22 mm
|
Memory Density |
9437184 bit
|
9437184 bit
|
Memory IC Type |
CACHE SRAM
|
ZBT SRAM
|
Memory Width |
18
|
18
|
Number of Functions |
1
|
1
|
Number of Terminals |
119
|
119
|
Number of Words |
524288 words
|
524288 words
|
Number of Words Code |
512000
|
512000
|
Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
Operating Temperature-Max |
70 °C
|
70 °C
|
Operating Temperature-Min |
|
|
Organization |
512KX18
|
512KX18
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
BGA
|
BGA
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
GRID ARRAY
|
GRID ARRAY
|
Parallel/Serial |
PARALLEL
|
PARALLEL
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Supply Voltage-Max (Vsup) |
3.465 V
|
3.465 V
|
Supply Voltage-Min (Vsup) |
3.135 V
|
3.135 V
|
Supply Voltage-Nom (Vsup) |
3.3 V
|
3.3 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
COMMERCIAL
|
COMMERCIAL
|
Terminal Form |
BALL
|
BALL
|
Terminal Pitch |
1.27 mm
|
1.27 mm
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Width |
14 mm
|
14 mm
|
Base Number Matches |
1
|
1
|
Pbfree Code |
|
No
|
Rohs Code |
|
No
|
JESD-609 Code |
|
e0
|
Moisture Sensitivity Level |
|
3
|
Seated Height-Max |
|
3.5 mm
|
Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare K7A801800M-HC200 with alternatives
Compare IDT71V659S80BG with alternatives