K7A801800M-HC200 vs IDT71T657S80PF feature comparison

K7A801800M-HC200 Samsung Semiconductor

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IDT71T657S80PF Integrated Device Technology Inc

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC INTEGRATED DEVICE TECHNOLOGY INC
Part Package Code BGA QFP
Package Description BGA, LQFP,
Pin Count 119 100
Reach Compliance Code unknown compliant
ECCN Code 3A991.B.2.A 3A991.B.2.A
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 3.1 ns 8 ns
Additional Feature PIPELINED ARCHITECTURE
JESD-30 Code R-PBGA-B119 R-PQFP-G100
Length 22 mm 20 mm
Memory Density 9437184 bit 9437184 bit
Memory IC Type CACHE SRAM ZBT SRAM
Memory Width 18 36
Number of Functions 1 1
Number of Terminals 119 100
Number of Words 524288 words 262144 words
Number of Words Code 512000 256000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 512KX18 256KX36
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code BGA LQFP
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY FLATPACK, LOW PROFILE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Supply Voltage-Max (Vsup) 3.465 V 2.625 V
Supply Voltage-Min (Vsup) 3.135 V 2.375 V
Supply Voltage-Nom (Vsup) 3.3 V 2.5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form BALL GULL WING
Terminal Pitch 1.27 mm 0.65 mm
Terminal Position BOTTOM QUAD
Width 14 mm 14 mm
Base Number Matches 1 1
Pbfree Code No
Rohs Code No
JESD-609 Code e0
Moisture Sensitivity Level 3
Peak Reflow Temperature (Cel) NOT SPECIFIED
Seated Height-Max 1.6 mm
Terminal Finish Tin/Lead (Sn/Pb)
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare K7A801800M-HC200 with alternatives

Compare IDT71T657S80PF with alternatives