K3N4C1000E-DC120
vs
HN62428P-15
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
RENESAS ELECTRONICS CORP
Part Package Code
DIP
DIP
Package Description
DIP,
DIP,
Pin Count
42
42
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.71
8542.32.00.71
Access Time-Max
120 ns
150 ns
Alternate Memory Width
8
16
JESD-30 Code
R-PDIP-T42
R-PDIP-T42
Length
52.43 mm
52.8 mm
Memory Density
8388608 bit
8388608 bit
Memory IC Type
MASK ROM
MASK ROM
Memory Width
16
8
Number of Functions
1
1
Number of Terminals
42
42
Number of Words
524288 words
1048576 words
Number of Words Code
512000
1000000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
70 °C
70 °C
Operating Temperature-Min
Organization
512KX16
1MX8
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
DIP
DIP
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Parallel/Serial
PARALLEL
PARALLEL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Qualification Status
Not Qualified
Not Qualified
Seated Height-Max
5.08 mm
5.08 mm
Supply Current-Max
0.05 mA
Supply Voltage-Max (Vsup)
5.5 V
5.5 V
Supply Voltage-Min (Vsup)
4.5 V
4.5 V
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
NO
NO
Technology
CMOS
CMOS
Temperature Grade
COMMERCIAL
COMMERCIAL
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Pitch
2.54 mm
2.54 mm
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Width
15.24 mm
15.24 mm
Base Number Matches
1
2
Compare K3N4C1000E-DC120 with alternatives
Compare HN62428P-15 with alternatives