K3N4C1000E-DC120 vs MX23C8100PC-12 feature comparison

K3N4C1000E-DC120 Samsung Semiconductor

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MX23C8100PC-12 Macronix International Co Ltd

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC MACRONIX INTERNATIONAL CO LTD
Part Package Code DIP DIP
Package Description DIP, DIP, DIP42,.6
Pin Count 42 42
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.71 8542.32.00.71
Access Time-Max 120 ns 120 ns
Alternate Memory Width 8 8
JESD-30 Code R-PDIP-T42 R-PDIP-T42
Length 52.43 mm 51.94 mm
Memory Density 8388608 bit 8388608 bit
Memory IC Type MASK ROM MASK ROM
Memory Width 16 16
Number of Functions 1 1
Number of Terminals 42 42
Number of Words 524288 words 524288 words
Number of Words Code 512000 512000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 512KX16 512KX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code DIP DIP
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Qualification Status Not Qualified Not Qualified
Seated Height-Max 5.08 mm 4.9 mm
Supply Current-Max 0.05 mA 0.06 mA
Supply Voltage-Max (Vsup) 5.5 V 5.5 V
Supply Voltage-Min (Vsup) 4.5 V 4.5 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Width 15.24 mm 15.24 mm
Base Number Matches 1 1
Output Characteristics 3-STATE
Package Equivalence Code DIP42,.6
Standby Current-Max 0.00005 A

Compare K3N4C1000E-DC120 with alternatives

Compare MX23C8100PC-12 with alternatives