JANTXV1N6461
vs
SMBJ11A.TF
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
SEMTECH CORP
Reach Compliance Code
compliant
unknown
Additional Feature
TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE
Breakdown Voltage-Min
5.6 V
12.2 V
Case Connection
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
R-PDSO-C2
JESD-609 Code
e0
Non-rep Peak Rev Power Dis-Max
500 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
GLASS
PLASTIC/EPOXY
Package Shape
ROUND
RECTANGULAR
Package Style
LONG FORM
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
2.5 W
1 W
Qualification Status
Qualified
Not Qualified
Reference Standard
MIL-19500/551
Rep Pk Reverse Voltage-Max
5 V
Surface Mount
NO
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
Terminal Form
WIRE
C BEND
Terminal Position
AXIAL
DUAL
Base Number Matches
6
1
ECCN Code
EAR99
HTS Code
8541.10.00.50
Clamping Voltage-Max
18.2 V
JEDEC-95 Code
DO-214AA
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Reverse Current-Max
5 µA
Compare JANTXV1N6461 with alternatives
Compare SMBJ11A.TF with alternatives