JANTX1N6116A
vs
1N6112A
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
SEMICON COMPONENTS INC
MICROCHIP TECHNOLOGY INC
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Min
25.7 V
17.1 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
37.4 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-XALF-W2
O-LALF-W2
Non-rep Peak Rev Power Dis-Max
500 W
500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
UNSPECIFIED
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
3 W
2 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
MIL-19500/516
Reverse Current-Max
1 µA
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
9
11
Rohs Code
Package Description
HERMETIC SEALED, GLASS, B PACKAGE-2
Factory Lead Time
21 Weeks
Additional Feature
HIGH RELIABILITY
JESD-609 Code
e0
Rep Pk Reverse Voltage-Max
13.7 V
Terminal Finish
TIN LEAD
Compare JANTX1N6116A with alternatives
Compare 1N6112A with alternatives