1N6112A
vs
JANTXV1N6116A
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
BKC SEMICONDUCTORS INC
Package Description
HERMETIC SEALED, GLASS, B PACKAGE-2
Reach Compliance Code
compliant
unknown
Factory Lead Time
21 Weeks
Additional Feature
HIGH RELIABILITY
Breakdown Voltage-Min
17.1 V
24.3 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
O-LALF-W2
JESD-609 Code
e0
e0
Non-rep Peak Rev Power Dis-Max
500 W
500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
2 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
13.7 V
20.6 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
Tin/Lead (Sn/Pb)
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
11
9
Breakdown Voltage-Nom
27 V
Clamping Voltage-Max
39.2 V
Reverse Current-Max
1 µA
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