1N6112A
vs
1N6116A
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
DIGITRON SEMICONDUCTORS
Reach Compliance Code
unknown
unknown
Breakdown Voltage-Min
17.1 V
25.7 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
E-XALF-W2
O-XALF-W2
Non-rep Peak Rev Power Dis-Max
500 W
500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
UNSPECIFIED
UNSPECIFIED
Package Shape
ELLIPTICAL
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Rep Pk Reverse Voltage-Max
13.7 V
20.6 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
11
11
Rohs Code
Case Connection
ISOLATED
Clamping Voltage-Max
37.4 V
JESD-609 Code
e0
Power Dissipation-Max
2 W
Reverse Current-Max
1 µA
Terminal Finish
TIN LEAD
Compare 1N6112A with alternatives
Compare 1N6116A with alternatives