JAN1N6118A vs P4KE350C feature comparison

JAN1N6118A Bkc Semiconductors Inc

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P4KE350C HY Electronic Corp

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Rohs Code No
Part Life Cycle Code Obsolete Contact Manufacturer
Ihs Manufacturer BKC SEMICONDUCTORS INC HY ELECTRONIC CORP
Reach Compliance Code unknown unknown
Breakdown Voltage-Min 29.7 V 315 V
Breakdown Voltage-Nom 33 V 350 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 47.9 V 504 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 O-PALF-W2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 500 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 3 W 1 W
Qualification Status Not Qualified
Reference Standard MIL-19500/516
Rep Pk Reverse Voltage-Max 25.1 V 284 V
Reverse Current-Max 1 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 9 51
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 385 V
JEDEC-95 Code DO-41
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C

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