JAN1N6118A
vs
SA28C
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
DEFENSE LOGISTICS AGENCY
DIGITRON SEMICONDUCTORS
Reach Compliance Code
unknown
unknown
Breakdown Voltage-Min
29.7 V
31.1 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
O-XALF-W2
Non-rep Peak Rev Power Dis-Max
500 W
500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
GLASS
UNSPECIFIED
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
3 W
2.5 W
Qualification Status
Qualified
Reference Standard
MIL-19500/516
Rep Pk Reverse Voltage-Max
25.1 V
28 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
9
48
Rohs Code
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Max
38 V
JEDEC-95 Code
DO-41
JESD-609 Code
e0
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Terminal Finish
TIN LEAD
Compare JAN1N6118A with alternatives
Compare SA28C with alternatives