P4KE350C vs P4KE350CHA0G feature comparison

P4KE350C Dean Technology

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P4KE350CHA0G Taiwan Semiconductor

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Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer DEAN TECHNOLOGY INC TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 385 V 385 V
Breakdown Voltage-Min 315 V 315 V
Breakdown Voltage-Nom 350 V 350 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 504 V 504 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-41 DO-204AL
JESD-30 Code O-PALF-W2 O-PALF-W2
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Rep Pk Reverse Voltage-Max 284 V 284 V
Reverse Current-Max 5 µA
Reverse Test Voltage 284 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 51 1
Rohs Code Yes
Package Description DO-41, 2 PIN
Additional Feature EXCELLENT CLAMPING CAPABILITY
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 400 W
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Power Dissipation-Max 1 W
Reference Standard AEC-Q101; UL RECOGNIZED
Terminal Finish MATTE TIN

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