IRG4BC20FD-SPBF vs HGTP15N50C1 feature comparison

IRG4BC20FD-SPBF International Rectifier

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HGTP15N50C1 Harris Semiconductor

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP HARRIS SEMICONDUCTOR
Part Package Code D2PAK
Package Description LEAD FREE, PLASTIC, D2PAK-3
Pin Count 3
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 16 A 15 A
Collector-Emitter Voltage-Max 600 V 500 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
Gate-Emitter Thr Voltage-Max 6 V 4.5 V
Gate-Emitter Voltage-Max 20 V 20 V
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 60 W 75 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier TIN LEAD
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application POWER CONTROL POWER CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 610 ns
Turn-on Time-Nom (ton) 63 ns
Base Number Matches 1 1
HTS Code 8541.29.00.95
Fall Time-Max (tf) 500 ns
JEDEC-95 Code TO-220AB
Power Dissipation Ambient-Max 75 W
Rise Time-Max (tr) 50 ns
Turn-off Time-Max (toff) 400 ns
Turn-on Time-Max (ton) 50 ns
VCEsat-Max 3.2 V

Compare IRG4BC20FD-SPBF with alternatives

Compare HGTP15N50C1 with alternatives