IRFR2229A
vs
PHD9NQ20T,118
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
HARRIS SEMICONDUCTOR
NXP SEMICONDUCTORS
Package Description
SMALL OUTLINE, R-PSSO-G2
PLASTIC, SMD, SC-63, DPAK-3
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
200 V
Drain Current-Max (ID)
3.8 A
8.7 A
Drain-source On Resistance-Max
1.2 Ω
0.4 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Rohs Code
Part Package Code
DPAK
Pin Count
3
Manufacturer Package Code
SOT428
HTS Code
8541.29.00.75
Avalanche Energy Rating (Eas)
93 mJ
Case Connection
DRAIN
JESD-609 Code
e3
Moisture Sensitivity Level
1
Operating Temperature-Max
175 °C
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max (Abs)
88 W
Pulsed Drain Current-Max (IDM)
35 A
Terminal Finish
TIN
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Compare IRFR2229A with alternatives
Compare PHD9NQ20T,118 with alternatives