IRFR2229A
vs
IRFR221
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
HARRIS SEMICONDUCTOR
ROCHESTER ELECTRONICS LLC
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
150 V
Drain Current-Max (ID)
3.8 A
4.6 A
Drain-source On Resistance-Max
1.2 Ω
0.8 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
TO-252AA
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
Not Qualified
COMMERCIAL
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
4
Avalanche Energy Rating (Eas)
85 mJ
Case Connection
DRAIN
Pulsed Drain Current-Max (IDM)
18 A
Transistor Application
SWITCHING
Compare IRFR2229A with alternatives
Compare IRFR221 with alternatives