IRFR2229A
vs
BSP107-TAPE-7
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
HARRIS SEMICONDUCTOR
NXP SEMICONDUCTORS
Package Description
SMALL OUTLINE, R-PSSO-G2
SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
200 V
Drain Current-Max (ID)
3.8 A
0.2 A
Drain-source On Resistance-Max
1.2 Ω
28 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
R-PDSO-G4
Number of Elements
1
1
Number of Terminals
2
4
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
DUAL
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Case Connection
DRAIN
Feedback Cap-Max (Crss)
10 pF
Operating Temperature-Max
150 °C
Pulsed Drain Current-Max (IDM)
0.35 A
Transistor Application
SWITCHING
Turn-off Time-Max (toff)
20 ns
Turn-on Time-Max (ton)
10 ns
Compare IRFR2229A with alternatives
Compare BSP107-TAPE-7 with alternatives