BUZ323
vs
MTW16N40E
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
MOTOROLA SEMICONDUCTOR PRODUCTS
Reach Compliance Code
unknown
unknown
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
790 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
Single
DS Breakdown Voltage-Min
400 V
Drain Current-Max (ID)
15 A
Drain-source On Resistance-Max
0.3 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-218AA
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
60 A
Qualification Status
COMMERCIAL
Surface Mount
NO
NO
Terminal Finish
NOT SPECIFIED
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Base Number Matches
3
5
Rohs Code
Package Description
,
Drain Current-Max (Abs) (ID)
16 A
Operating Temperature-Max
150 °C
Power Dissipation-Max (Abs)
180 W
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