IRFF320PBF
vs
2N6792TXV
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
BCY
Package Description
CYLINDRICAL, O-MBCY-W3
CYLINDRICAL, O-MBCY-W3
Pin Count
2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Additional Feature
AVALANCHE RATED
RADIATION HARDENED
Avalanche Energy Rating (Eas)
0.242 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
400 V
400 V
Drain Current-Max (ID)
2 A
2 A
Drain-source On Resistance-Max
1.9 Ω
1.8 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-205AF
TO-205AF
JESD-30 Code
O-MBCY-W3
O-MBCY-W3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation Ambient-Max
20 W
Pulsed Drain Current-Max (IDM)
10 A
10 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Form
WIRE
WIRE
Terminal Position
BOTTOM
BOTTOM
Time@Peak Reflow Temperature-Max (s)
40
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
95 ns
Turn-on Time-Max (ton)
75 ns
Base Number Matches
1
4
Case Connection
DRAIN
Reference Standard
MILITARY STANDARD (USA)
Compare IRFF320PBF with alternatives
Compare 2N6792TXV with alternatives