2N6792TXV
vs
JANTX2N6792
feature comparison
Part Life Cycle Code |
Transferred
|
Contact Manufacturer
|
Ihs Manufacturer |
FAIRCHILD SEMICONDUCTOR CORP
|
SEMICOA CORP
|
Package Description |
CYLINDRICAL, O-MBCY-W3
|
CYLINDRICAL, O-MBCY-W3
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
RADIATION HARDENED
|
|
Case Connection |
DRAIN
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
400 V
|
400 V
|
Drain Current-Max (ID) |
2 A
|
2 A
|
Drain-source On Resistance-Max |
1.8 Ω
|
1.9 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-205AF
|
TO-205AF
|
JESD-30 Code |
O-MBCY-W3
|
O-MBCY-W3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
METAL
|
METAL
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
10 A
|
10 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Reference Standard |
MILITARY STANDARD (USA)
|
MIL-19500
|
Surface Mount |
NO
|
NO
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Transistor Application |
SWITCHING
|
AMPLIFIER
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
4
|
6
|
Avalanche Energy Rating (Eas) |
|
0.242 mJ
|
|
|
|
Compare 2N6792TXV with alternatives
Compare JANTX2N6792 with alternatives