Part Details for IRFF320PBF by International Rectifier
Overview of IRFF320PBF by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRFF320PBF
IRFF320PBF CAD Models
IRFF320PBF Part Data Attributes
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IRFF320PBF
International Rectifier
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Datasheet
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IRFF320PBF
International Rectifier
Power Field-Effect Transistor, 2A I(D), 400V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | BCY | |
| Package Description | CYLINDRICAL, O-MBCY-W3 | |
| Pin Count | 2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 0.242 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 400 V | |
| Drain Current-Max (ID) | 2 A | |
| Drain-source On Resistance-Max | 1.9 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-205AF | |
| JESD-30 Code | O-MBCY-W3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 20 W | |
| Pulsed Drain Current-Max (IDM) | 10 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 95 ns | |
| Turn-on Time-Max (ton) | 75 ns |
Alternate Parts for IRFF320PBF
This table gives cross-reference parts and alternative options found for IRFF320PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFF320PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2N6792R1 | 2A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFF320PBF vs 2N6792R1 |
| 2N6792R1 | Power Field-Effect Transistor, 2A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN | TT Electronics Resistors | IRFF320PBF vs 2N6792R1 |
| 2N6792PBF | Power Field-Effect Transistor, 2A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | International Rectifier | IRFF320PBF vs 2N6792PBF |
| IRFF320R1 | Power Field-Effect Transistor, 2A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN | TT Electronics Resistors | IRFF320PBF vs IRFF320R1 |
| JANTX2N6792 | 2A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | Intersil Corporation | IRFF320PBF vs JANTX2N6792 |
| JAN2N6792 | Power Field-Effect Transistor, 2A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205 | International Rectifier | IRFF320PBF vs JAN2N6792 |
| JANTX2N6792 | Power Field-Effect Transistor, 2A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | Harris Semiconductor | IRFF320PBF vs JANTX2N6792 |
| JANTXV2N6792 | Power Field-Effect Transistor, 2A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | Harris Semiconductor | IRFF320PBF vs JANTXV2N6792 |
| JANTXV2N6792 | Power Field-Effect Transistor, 2A I(D), 400V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | Infineon Technologies AG | IRFF320PBF vs JANTXV2N6792 |
| 2N6792 | Power Field-Effect Transistor, 2A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | Harris Semiconductor | IRFF320PBF vs 2N6792 |