IPD30N10S3L34ATMA1
vs
2SK3647-01
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Not Recommended
|
Obsolete
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
FUJI ELECTRIC CO LTD
|
| Package Description |
SMALL OUTLINE, R-PSSO-G2
|
CHIP CARRIER, S-XBCC-N4
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
Infineon
|
|
| Avalanche Energy Rating (Eas) |
138 mJ
|
278 mJ
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
100 V
|
100 V
|
| Drain Current-Max (ID) |
30 A
|
30 A
|
| Drain-source On Resistance-Max |
0.0418 Ω
|
0.044 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
68 pF
|
|
| JEDEC-95 Code |
TO-252
|
|
| JESD-30 Code |
R-PSSO-G2
|
S-XBCC-N4
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
4
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
175 °C
|
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
UNSPECIFIED
|
| Package Shape |
RECTANGULAR
|
SQUARE
|
| Package Style |
SMALL OUTLINE
|
CHIP CARRIER
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
57 W
|
|
| Pulsed Drain Current-Max (IDM) |
120 A
|
120 A
|
| Reference Standard |
AEC-Q101; IEC-68-1
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin (Sn)
|
|
| Terminal Form |
GULL WING
|
NO LEAD
|
| Terminal Position |
SINGLE
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Pin Count |
|
4
|
| Qualification Status |
|
Not Qualified
|
| Transistor Application |
|
SWITCHING
|
|
|
|
Compare IPD30N10S3L34ATMA1 with alternatives
Compare 2SK3647-01 with alternatives