IPD30N10S3L34ATMA1 vs IRF540NHR feature comparison

IPD30N10S3L34ATMA1 Infineon Technologies AG

Buy Now Datasheet

IRF540NHR International Rectifier

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Not Recommended Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INTERNATIONAL RECTIFIER CORP
Package Description SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 138 mJ 185 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 30 A 33 A
Drain-source On Resistance-Max 0.0418 Ω 0.044 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 68 pF
JEDEC-95 Code TO-252 TO-220AB
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 57 W
Pulsed Drain Current-Max (IDM) 120 A 110 A
Reference Standard AEC-Q101; IEC-68-1
Surface Mount YES NO
Terminal Finish Tin (Sn)
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Part Package Code TO-220AB
Pin Count 3
Additional Feature AVALANCHE RATED, ULTRA LOW ON-RESISTANCE, HIGH RELIABILITY
Transistor Application SWITCHING

Compare IPD30N10S3L34ATMA1 with alternatives

Compare IRF540NHR with alternatives